Non-Volatile Resistance Switching Using Silicon Nanogap Junction
Non-Volatile Resistance Switching Using Silicon Nanogap Junction
复制标题
使用硅纳米间隙结的非易失性电阻开关
DOI：
10.1143/apex.1.103001
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发表时间：
2008
影响因子：
2.3
通讯作者：
Tetsuo Shimizu
中科院分区：
文献类型：
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作者：
Y. Naitoh;Y. Morita;M. Horikawa;H. Suga;Tetsuo Shimizu
研究了在脉冲偏置电压作用下，硅纳米隙结构的电阻开关效应。通过在硅线上施加大的偏置电压来制备硅纳米间隙结，并在真空室中测量了它们的电学性质。测量的电流-电压特性显示出明显的负阻效应和重复的开关周期，开关比高达103以上。结果表明，在由硅等共价键合材料组成的纳米间隙结中可以产生电阻开关效应。
We have investigated the resistance switching effect of a silicon nanogap structure when pulse bias voltages are applied. Silicon nanogap junctions were prepared by applying large-bias voltages across a Si wire and their electrical properties were measured in a vacuum chamber. The measured current–voltage characteristics exhibited a clear negative differential resistance effect and repeated on-off cycles with a large on-off ratio of over 103. The results suggest that resistance switching effects can be generated in a nanogap junction that is composed of a covalently bonded material such as silicon.
通过场发射诱导电迁移控制纳米间隙的隧道电阻
DOI：
--
发表时间：
2007
期刊：
Jpn. J. Appl. Phys. 46
影响因子：
--
作者：
S. Kayashima;K. Takahashi;M. Motoyama and J. Shirakashi
通讯作者：
M. Motoyama and J. Shirakashi