High‐voltage 4H‐SiC pn diodes fabricated by p‐type ion implantation
High‐voltage 4H‐SiC pn diodes fabricated by p‐type ion implantation
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DOI：
10.1002/ecjb.10162
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发表时间：
2003-04
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影响因子：
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通讯作者：
Y. Negoro;T. Kimoto;H. Matsunami
中科院分区：
文献类型：
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作者：
Y. Negoro;T. Kimoto;H. Matsunami
我们通过高剂量铝（Al）离子注入在4H-SiC（0001）面上形成低电阻p区，并通过Al或硼（B）离子注入制造和表征平面pn二极管。在Al离子注入中，通过高温注入和高温退火获得了3.6kω/□（p型）的最小薄层电阻。平面pn二极管具有良好的整流性能，其中表面p+层是通过高温注入Al离子形成的，p层是通过室温注入高能B离子形成的。我们实现了 2900 V 的高阻断电压（理论耐压的 90%）、8.0 mΩcm2 的低导通电阻以及阻断电压正温度系数的雪崩击穿特性。我们制造了之前未公开过的4H-SiC（1120）pn二极管，并获得了1850 V的高阻断电压（理论阻断电压的70%）。 © 2003 Wiley periodicals, Inc. Electron Comm Jpn Pt 2, 86(12): 44–51, 2003；在线发表于 Wiley InterScience (www.interscience.wiley.com)。 DOI 10.1002/ecjb.10162
We formed a low-resistance p region by high-dose aluminum (Al) ion implantation in the 4H-SiC (0001) face, and fabricated and characterized planar pn diodes by Al or boron (B) ion implantation. In Al ion implantation, the minimum sheet resistance of 3.6 kω/□ (p-type) is obtained by high-temperature implantation and high-temperature annealing. Excellent rectification was verified in planar pn diodes, in which the surface p+ layer was formed by high-temperature implantation of Al ions and the p layer was formed by room-temperature implantation of high-energy B ions. We achieved a high blocking voltage of 2900 V (90% of the theoretical withstand voltage), a low on-resistance of 8.0 mωcm2, and avalanche breakdown characteristics of a positive temperature coefficient for the blocking voltage. We fabricated a 4H-SiC (1120) pn diode, which has not been disclosed previously, and obtained a high blocking voltage of 1850 V (70% of the theoretical blocking voltage). © 2003 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 86(12): 44–51, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecjb.10162