Study of the influence of treatment on the strength of undoped indium antimonide single-crystal plates
Study of the influence of treatment on the strength of undoped indium antimonide single-crystal plates
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处理对无掺杂锑化铟单晶板强度影响的研究
DOI：
10.17073/1609-3577-2021-1-48-56
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Y. V. Syrov
中科院分区：
文献类型：
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作者：
S. S. Kormilitsina;E. V. Molodtsova;S. N. Knyzev;R. Kozlov;D. A. Zavrazhin;E. V. Zharikova;Y. V. Syrov
用平面横向弯曲法测量了（100）晶向非掺杂InSb单晶薄板的强度。结果表明，厚度≤ 800 μm的板材的强度取决于其加工工艺。使用完整的加工周期（研磨和化学抛光）可以将InSb板的强度提高2倍（从3.0到6.4 kg/mm 2）。结果表明，具有（100）取向的晶片的强度对加工的依赖性与晶片（111）的这种依赖性相似，而晶片（111）的强度高2倍。采用接触式轮廓术测量薄板的表面粗糙度，并对薄板进行连续加工。结果发现，在一个完整的加工周期，InSb板的粗糙度下降（Ra从0.6到0.04 μm），导致表面粗糙度的一般平滑。比较了（100）InSb和GaAs晶片的强度和粗糙度。发现GaAs切割晶片的强度比InSb切割晶片的强度高2倍，并且在其加工的完整循环之后略微增加。结果表明，GaAs和InSb板的粗糙度在一个完整的表面处理周期后显着降低：由于整体表面平整，InSb降低了10倍，GaAs降低了3倍（Rz从2.4 μm到0.8 μm），这是由于峰值分量的降低。对InSb板进行完整的加工周期可以通过顺序操作去除断裂层并降低机械损坏的风险来提高其强度。
The method of plane-transverse bending was used to measure the strength of thin single-crystal plates of undoped InSb with a crystallographic orientation of (100). It was found that the strength of the plates (thickness ≤ 800 μm) depends on their processing. Using a full processing cycle (grinding and chemical polishing) allows to increase the strength of InSb plates by 2 times (from 3.0 to 6.4 kg/mm2). It is shown that the dependence of strength on processing for wafers with (100) orientation is similar to this dependence for wafers (111), while the strength of wafers (111) is 2 times higher. The contact profilometry method was used to measure the roughness of thin plates, which also passed successive processing steps. It was found that during a full cycle of processing, the roughness of InSb plates decreases (Ra from 0.6 to 0.04 μm), leading to a general smoothing of the surface roughness. The strength and roughness of the (100) InSb and GaAs wafers are compared. It was found that the strength of GaAs cut wafers is 2 times higher than the strength of InSb cut wafers and slightly increases after a full cycle of their processing. It was shown that the roughness of GaAs and InSb plates after a full cycle of surface treatment is significantly reduced: 10 times for InSb due to overall surface leveling and 3 times for GaAs (Rz from 2.4 to 0.8 μm) due to a decrease in the peak component. Conducting a full cycle of processing InSb plates can increase their strength by removing broken layers by sequential operations and reducing the risk of mechanical damage.