Electrical characterization of organic based transistors: stability issues {
Electrical characterization of organic based transistors: stability issues {
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有机晶体管的电特性：稳定性问题{
DOI：
10.1002/pat.558
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发表时间：
2005
影响因子：
3.4
通讯作者：
K. Müllen
中科院分区：
文献类型：
--
作者：
H. Gomes;P. Stallinga;F. Dinelli;M. Murgia;F. Biscarini;D. Leeuw;M. Muccini;K. Müllen
研究了α-六噻吩基金属绝缘体半导体（MIS）晶体管的稳定性。特别是在施加栅极偏置的阈值电压漂移的动力学已被确定。的动力学遵循拉伸双曲线型的行为，在协议的形式主义开发来解释亚稳态非晶硅薄膜晶体管。使用该模型，可以量化设备稳定性。随温度变化的测量结果表明，阈值电压漂移涉及两个过程，一个发生在T = 220 K，另一个发生在T = 300 K。后一个过程被发现是样品依赖。这表明了器件稳定性与α-六噻吩沉积参数之间的关系。版权所有© 2005年约翰威利父子有限公司。
An investigation into the stability of metal insulator semiconductor (MIS) transistors based on α-sexithiophene is reported. In particular the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow a stretched-hyperbola type behavior, in agreement with the formalism developed to explain metastability in amorphous–silicon thin film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at T≈220 K and the other at T≈300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and α-sexithiophene deposition parameters. Copyright © 2005 John Wiley & Sons, Ltd.