Out-of-Equilibrium Body Potential Measurement on Silicon-on-Insulator With Deposited Metal Contacts
Out-of-Equilibrium Body Potential Measurement on Silicon-on-Insulator With Deposited Metal Contacts
复制标题
具有沉积金属触点的绝缘体上硅的非平衡体电位测量
DOI：
10.1109/ted.2020.3023872
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发表时间：
2020
影响因子：
3.1
通讯作者：
I. Ionica
中科院分区：
文献类型：
--
作者：
M. Alepidis;A. Bouchard;C. Delacour;M. Bawedin;I. Ionica
本文主要研究绝缘体上硅（SOI）衬底中的一种浮体效应——非平衡体电位。与现有的研究探索SOI完全制造的器件或用压力探头测量的SOI晶圆不同，这里探索的是具有沉积金属触点的SOI衬底中的非平衡体电位。将不同几何形状的铬和金/钛触点沉积在SOI的硅膜上，并对每种情况下的浮体电位进行了检测。研究了退火对器件性能的影响。通过准静态条件下的电流和电位监测来评价沉积金属触点的性能。根据金属和硅薄膜之间的功函数差异，电流测量表明，接触行为主要是欧姆式或肖特基式。虽然身体电位在肖特基式接触中表现出来，但在欧姆接触中似乎没有表现出显著的反应。说明了接触结构对人体电位特征的影响，从而能够选择适当的接触布局以增强人体电位响应。
This article focuses on one of the floating body effects in silicon-on-insulator (SOI) substrates, the out-of-equilibrium body potential. Unlike the already existing studies which explore either SOI fully fabricated devices or SOI wafers measured with pressure probes, here the out-of-equilibrium body potential is explored in SOI substrates with deposited metal contacts. Chromium and gold/titanium contacts of various geometries were deposited on silicon films of SOI and the floating body potential was examined in each case. The effect of annealing on the device behavior was also investigated. The performance of the deposited metal contacts is evaluated through current and potential monitoring under quasi-static conditions. Depending on the workfunction difference between metal and silicon film, the current measurements show that the contact behavior is mainly ohmic-like or Schottky-like. While body potential manifests itself with Schottky-like contacts, it does not seem to exhibit a significant response with ohmic contacts. The influence of the contact architecture on the body potential signature is illustrated, enabling the selection of the proper contact layout for an enhanced body potential response.