Solution-processed vanadium oxides as a hole-transport layer for Sb2Se3 thin-film solar cells
Solution-processed vanadium oxides as a hole-transport layer for Sb2Se3 thin-film solar cells
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DOI:
10.1016/j.solener.2021.11.009
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发表时间:
2022-01
期刊:
影响因子:
6.7
通讯作者:
Al-Robaidi Amin;Liping Guo;S. Vijayaraghavan;Dian Li;Xiaomeng Duan;Harigovind G. Menon;Jacob Wall;Subhadra Gupta;Mark Ming-Cheng Cheng-Mark-Ming-Cheng-Cheng-1399248973;Yufeng Zheng;Lin Li;Feng Yan
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文献类型:
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作者:
Al-Robaidi Amin;Liping Guo;S. Vijayaraghavan;Dian Li;Xiaomeng Duan;Harigovind G. Menon;Jacob Wall;Subhadra Gupta;Mark Ming-Cheng Cheng-Mark-Ming-Cheng-Cheng-1399248973;Yufeng Zheng;Lin Li;Feng Yan
Antimony selenide (Sb2Se3) is a promising light absorber material for solar cells because of its superior photovoltaic properties. However, the current performance of the Sb2Se3solar cell is much lower than its theoretical value (∼32%) due to its low open-circuit voltage (VOC). In this paper, we have demonstrated inorganic vanadium oxides (VOx) as a hole transport layer (HTL) for Sb2Se3solar cells to enhance efficiency through theVOCimprovement. Here, a solution-processed VOxthrough the decomposition of the triisopropoxyvanadium (V) oxide is deposited on the Sb2Se3absorber layer prepared by close-spaced sublimation (CSS). With VOxHTL, the built-in voltage (Vbi) is significantly increased, leading to improvedVOCfor the Sb2Se3solar cell devices. As a result, the efficiency of the device increases from an average efficiency of 5.5% to 6.3% with the VOx.