Narrow-linewidth master-oscillator power amplifier based on a semiconductor tapered amplifier.
Narrow-linewidth master-oscillator power amplifier based on a semiconductor tapered amplifier.
复制标题
基于半导体锥形放大器的窄线宽主振荡器功率放大器。
DOI：
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发表时间：
1998
期刊：
影响因子：
1.9
通讯作者：
Donald M. Warrington
中科院分区：
文献类型：
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作者：
Andrew C. Wilson;Johnathan C. Sharpe;Callum R. McKenzie;Peter J. Manson;Donald M. Warrington
将光栅稳定外腔二极管激光器的输出注入主振功率放大器结构的半导体锥形放大器中，产生窄线宽的功率高达500mw。由于锥形放大器产生的额外线宽比光栅稳定激光二极管的典型线宽小得多。为了证明窄线宽和高输出功率的实用性，我们使用该系统对铷进行了无多普勒双光子光谱分析。
The output of a grating-stabilized external-cavity diode laser was injected into a semiconductor tapered amplifier in a master-oscillator power amplifier configuration, producing as much as 500 mW of power with narrow linewidth. The additional linewidth that is due to the tapered amplifier is much smaller than the typical linewidth of grating-stabilized laser diodes. To demonstrate the usefulness of the narrow linewidth and high output power, we used the system to perform Doppler-free two-photon spectroscopy with rubidium.