Recessed-Gate Enhancement-Mode GaN MOSFETs With a Double-Insulator Gate Providing 10-MHz Switching Operation
Recessed-Gate Enhancement-Mode GaN MOSFETs With a Double-Insulator Gate Providing 10-MHz Switching Operation
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DOI：
10.1109/led.2013.2272491
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发表时间：
2013-07
影响因子：
4.9
通讯作者：
J. Kashiwagi;T. Fujiwara;Minoru Akutsu;Norikazu Ito;K. Chikamatsu;K. Nakahara
中科院分区：
文献类型：
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作者：
J. Kashiwagi;T. Fujiwara;Minoru Akutsu;Norikazu Ito;K. Chikamatsu;K. Nakahara
具有双绝缘子栅极结构的嵌入栅极GaN金属氧化物半导体场效应晶体管演示了延迟时间<；35 ns。通过蚀刻Al0.19Ga0.81N层来暴露其下的AlN层，从而制备凹槽结构。该器件包括一个热氧化AlN层，在其上通过原子层沉积形成Al2O3薄膜，作为栅极绝缘体。该结构在典型的阈值电压为1.4 V时执行增强模式操作。在6 V栅极偏置时，最大漏极电流为158.3 mA/mm，在10 V漏极偏置时，最大跨导为52.1 mS/mm。
Recessed-gate GaN metal-oxide-semiconductor field-effect transistors with a double-insulator gate configuration demonstrate 10-MHz switching operation of which delay time is <;35 ns. The recess structure is fabricated by etching the Al0.19Ga0.81N layers to expose their underlying AlN layers. The devices include a thermally oxidized AlN layer onto which an Al2O3 film is formed by atomic layer deposition, which works as a gate insulator. This structure performs enhancement-mode operation with a typical threshold voltage of 1.4 V. A maximum drain current of 158.3 mA/mm is achieved at 6 V gate bias and maximum transconductance is 52.1 mS/mm at 10 V drain bias.