Single-Crystal Electrochemistry Reveals Why Metal Nanowires Grow
Single-Crystal Electrochemistry Reveals Why Metal Nanowires Grow
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DOI：
10.1021/jacs.8b08053
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发表时间：
2018-11-07
影响因子：
15
通讯作者：
Wiley, Benjamin J.
中科院分区：
文献类型：
--
作者：
Kim, Myung Jun;Alvarez, Samuel;Wiley, Benjamin J.
形状控制被用于调整从催化剂到触摸屏等应用中的金属纳米结构的性质，但金属纳米晶体在溶液中各向异性生长的起源尚不清楚。我们表明，单晶电化学可以测试假设为什么纳米结构的形式和预测各向异性生长的条件，通过量化的程度，不同的物种造成小面选择性金属沉积。电化学测量表明，氯离子破坏烷基胺单分子膜导致刻面选择性铜沉积。一个中间范围的氯化物浓度最大限度地小面选择性铜沉积单晶，并产生最高的纵横比纳米线在溶液相合成。DFT计算类似地示出了氯化物的中间单层覆盖从纳米线的端部而不是侧部置换烷基胺封端剂，从而促进各向异性生长。
Shape-control is used to tune the properties of metal nanostructures in applications ranging from catalysts to touch screens, but the origins of anisotropic growth of metal nanocrystals in solution are unknown. We show single-crystal electrochemistry can test hypotheses for why nanostructures form and predict conditions for anisotropic growth by quantifying the degree to which different species cause facet-selective metal deposition. Electrochemical measurements show disruption of alkylamine monolayers by chloride ions causes facet-selective Cu deposition. An intermediate range of chloride concentrations maximizes facet-selective Cu deposition on single crystals and produces the highest aspect ratio nanowires in a solution-phase synthesis. DFT calculations similarly show an intermediate monolayer coverage of chloride displaces the alkylamine capping agent from the ends but not the sides of a nanowire, facilitating anisotropic growth.