Organic Position Sensitive Detectors Based on ZnO:Al and CuPc:C60
Organic Position Sensitive Detectors Based on ZnO:Al and CuPc:C60
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基于 ZnO:Al 和 CuPc:C60 的有机位置敏感探测器
DOI：
10.1166/jnn.2016.12300
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发表时间：
2016
影响因子：
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通讯作者：
Hiroki Nishimaru
中科院分区：
文献类型：
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作者：
Taichiro Morimune;Hirotake Kajii;Hiroki Nishimaru
以掺杂铝的ZnO （ZnO:Al）为阻层，采用溶胶-凝胶法制备了具有倒结构的酞菁铜CuPc：富勒烯C60块异质结有机位置敏感探测器（OPSD）。将一维PSD的电阻长度固定为5mm，在100 μm的宽度内采用真空蒸发法制备Ag共电极。研究了不同结构光电探测器的电流密度-电压特性，ZnO:Al电阻率对psd厚度和位置特性的影响。实验结果表明，与传统结构相比，采用倒置结构的结构在红光照射下提高了灵敏度。此外，ZnO:Al的厚度对其位置特性也有影响。本研究制备的Al掺杂浓度为2mol %的ZnO:Al薄膜的电阻率在150 Ωcm左右，并且从小于约400nm的厚度开始增加。这些特征似乎与ZnO:Al电阻层的性质有关。对于厚度为620 nm的ZnO:Al层器件，在红色激光照射下，由输出光电流得到的测量位置值与实际位置值吻合。CuPc:C60 OPSD具有倒置结构，具有红光敏感性，在−3v时，入射光子到电流的转换效率高达80%以上，在−2V时线性误差为5.9%。
Organic position-sensitive detector (OPSD) based on copper phthalocyanine CuPc:fullerene C60 bulk-heterojunction with an inverted structure have been fabricated using aluminum doped ZnO (ZnO:Al) as a resistive layer, which is prepared by sol–gel method. The resistance length of the one-dimensional PSD is fixed at 5 mm, and the Ag common electrode is fabricated by vacuum evaporation within the 100-μm width. The current density–voltage characteristics with different structures of photodetector, the influence of ZnO:Al resistivity on the thickness and the position characteristics of PSDs are investigated. The experimental results indicate that the architecture, which uses an inverted structure, increases sensitivity under red light illumination compared to the conventional structure. In addition, the thickness of the ZnO:Al has influence on the position characteristics. The resistivity of ZnO:Al film with Al doping concentration of 2 mol% prepared in this study is around 150 Ωcm and it increases from less than approximately 400 nm-thickness. These characteristics seem to be correlated with the properties of ZnO:Al resistive layer. For a device with a 620 nm-thick ZnO:Al layer, the measured position values obtained from the output photocurrent agree with the actual position values under red laser light illumination. CuPc:C60 OPSD with an inverted structure exhibits red light sensitivity, high incident-photon-to-current conversion efficiency of above 80% at −3 V and linearity error of 5.9% at −2V.