Transition metal-doped amorphous oxide semiconductor thin film phosphor, chromium-doped amorphous gallium oxide
Transition metal-doped amorphous oxide semiconductor thin film phosphor, chromium-doped amorphous gallium oxide
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过渡金属掺杂非晶氧化物半导体薄膜荧光粉、铬掺杂非晶氧化镓
DOI：
10.1002/pssa.201800198
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Toshio Kamiya
中科院分区：
文献类型：
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作者：
Keisuke Ide;Yuki Futakado;Naoto Watanabe;Junghwan Kim;Takayoshi Katase;Hidenori Hiramatsu;Hideo Hosono;Toshio Kamiya
研究了过渡金属(TM)掺杂非晶态氧化镓(a-GO：TMX)作为无机薄膜荧光粉的性能。在初步筛选的基础上，选择CR作为排放中心。通过优化薄膜生长过程中的铬浓度(x= 0.001)和氧分压(Po2= 10 Pa.)，获得了室温下生长的Ta-Go：Crx薄膜最强的红光发射，发射带宽为6 2 0~80 0 nm。在低于晶化温度的氧气中进行400 °C的沉积后热退火，可使PL的内量子效率提高到0.3%。晶化薄膜经800 °C退火热处理后，IQE进一步提高到20%。在传统的无机荧光粉中，通常可以观察到晶化对发光的改善，但与以前报道的稀土(RE)-掺杂GO：RExT薄膜荧光粉的情况相反。这是由于铬和稀土在β-Ga2O3型基质中的溶解度不同所致。
Transition metal (TM)‐doped amorphous gallium oxide (a‐GO:TMx) is studied as an inorganic thin‐film phosphor. Cr is selected as an emission center based on preliminary screening. The most intense red photoluminescence (PL) with a broad emission band of 620–800 nm from thea‐GO:Crxfilms deposited at room temperature is attained by optimizing the Cr concentration (x= 0.001) and the oxygen partial pressure (PO2= 10 Pa) during the film growth. Post‐deposition thermal annealing at 400 °C in O2, which is lower than the crystallization temperature, improves internal quantum efficiency (IQE) of PL to 0.3%. Crystallized films by 800 °C annealing further improves the IQE to 20%. The improvement of PL by crystallization is commonly observed for conventional inorganic phosphors, but opposite to that of previously reported rare‐earth (RE)‐dopeda‐GO:RExthin‐film phosphors. It is explained by different solubility of Cr andREin theβ‐Ga2O3host.