Minority Carrier Lifetime in Beryllium-Doped InAs/InAsSb Strained Layer Superlattices
Minority Carrier Lifetime in Beryllium-Doped InAs/InAsSb Strained Layer Superlattices
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DOI：
10.1007/s11664-014-3239-6
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发表时间：
2014-06
影响因子：
2.1
通讯作者：
Y. Lin;D. Wang;D. Donetsky;G. Belenky;H. Hier;W. Sarney;S. Svensson
中科院分区：
文献类型：
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作者：
Y. Lin;D. Wang;D. Donetsky;G. Belenky;H. Hier;W. Sarney;S. Svensson
用光致发光动力学方法研究了能隙低至0.165 eV的InAs/InAsSb应变层超晶格（SLS）中未掺杂和掺铍的2型无Ga材料的少子寿命。在77 K的未掺杂的SLS中的450 ns的少数载流子寿命证实了高的材料质量。在类似生长的结构中，测量到的电子寿命分别为τn= 45 ns和8 ns，其中掺杂NA = 6 × 1016和3 × 1017 cm −3。6 × 1016 cm − 3的掺杂水平是长波红外（LWIR）含Ga的InAs/GaSb SLS中典型背景掺杂水平的6倍，具有相似的带隙和电子寿命。这表明，长波红外探测器与InAs/InAsSb SLS吸收体可以设计具有较小的少数载流子浓度和扩散暗电流密度。在T = 77 K的无Ga SLS中，当p型掺杂达到1017 cm − 3能级时，寿命随掺杂的相对缓慢的下降表明俄歇复合的作用较小。
Minority carrier lifetimes in undoped and Beryllium-doped Type-2 Ga-free, InAs/InAsSb strained layer superlattices (SLS) with energy gaps as low as 0.165 eV were determined from photoluminescence kinetics. The minority carrier lifetime of 450 ns at 77 K in the undoped SLS confirms a high material quality. In similarly-grown structures that werep-doped toNA= 6 × 1016and 3 × 1017cm−3, electron lifetimes ofτn= 45 ns and 8 ns were measured. The 6 × 1016cm−3doping level is a factor of 6 greater than the typical background doping level in long-wave infrared (LWIR) Ga-containing InAs/GaSb SLS with similar bandgap and electron lifetime. This suggests that LWIR photodetectors with InAs/InAsSb SLS absorbers can be designed with smaller minority carrier concentrations and diffusion dark current densities. A relatively slow decrease of the lifetime with doping suggests a minor role of Auger recombination in the studied Ga-free SLS atT= 77 K withp-doping up to mid-1017cm−3level.