Combination lithography for photonic-crystal circuits
Combination lithography for photonic-crystal circuits
复制标题
光子晶体电路的组合光刻
DOI：
10.1116/1.1637915
复制
发表时间：
2004
影响因子：
1.4
通讯作者：
D. Prather
中科院分区：
文献类型：
--
作者：
G. Schneider;J. Murakowski;S. Venkataraman;D. Prather
我们提出并论证了一种制造具有设计缺陷的大面积光子晶体板的工艺。该工艺利用了我们在某些光致抗蚀剂中观察到的特性。这些抗蚀剂在紫外线照射下表现出正性，在电子束曝光下表现为负性抗蚀剂。电子束曝光首先用于曝光缺陷结构，这使得它们对进一步曝光不敏感。随后，用光子晶体结构曝光大面积，光子晶体结构由通过几个紫外激光束之间的干涉限定的规则图案的孔组成。在化学显影时，在抗蚀剂中产生具有局部图案化缺陷的大的光子晶体区域。图案化的抗蚀剂用作蚀刻掩模，用于蚀刻高折射率材料的板。在这篇文章中，我们描述了制造过程和目前的制造结构。
We propose and demonstrate a process for fabricating large-area photonic-crystal slabs with designed defects. The process takes advantage of a property we have observed in certain photoresists. These resists, which under ultraviolet illumination exhibit positive tone, behave as negative resists under electron-beam exposure. Electron-beam exposure is used first to expose defect structures, which renders them insensitive to further exposure. Subsequently, a large area is exposed with a photonic-crystal structure consisting of a regular pattern of holes defined by the interference between several ultraviolet laser beams. Upon chemical developing, a large photonic-crystal region with local patterned defects is created in the resist. The patterned resist is used as an etch mask for etching a slab of high-refractive-index material. In this article, we describe the fabrication process and present fabricated structures.