Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations
Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations
复制标题
DOI：
10.1063/1.5100328
复制
发表时间：
2019-06
影响因子：
4
通讯作者：
Tsubasa Matsumoto;H. Kato;T. Makino;M. Ogura;D. Takeuchi;S. Yamasaki;T. Inokuma;N. Tokuda
中科院分区：
文献类型：
--
作者：
Tsubasa Matsumoto;H. Kato;T. Makino;M. Ogura;D. Takeuchi;S. Yamasaki;T. Inokuma;N. Tokuda
研究了反型沟道金刚石金属氧化物半导体场效应晶体管（MOSFET）的场效应迁移率μFE和界面态密度Dit与磷浓度（NP）的关系。反型沟道金刚石MOSFET具有宽带隙、高击穿电场、高载流子迁移率和高热导率等优良特性，在高频、大电流和高压器件中具有潜在的应用前景。然而，器件设计参数的影响，如NP在n型体和氧化层材料，对反型沟道金刚石MOSFET的电特性尚未报道。在这项研究中，我们制造的反型沟道金刚石MOSFET使用不同的NP值的n型体。对于n型体中NP减少，μFE增加，而Dit减少。使用最低NP为2 × 1015 cm−3的n型体，获得最大μFE为20 cm 2/V·s，最小Dit为1 × 1013 cm−2·eV−1。此外，发现μFE与Dit之间存在负相关。具体而言，在漏极电流-栅极电压特性的低栅极电压区域中，μFE和Dit强烈地负相关。高的Dit表明，大多数空穴被困在界面态的强散射因子在低栅电压区。研究了反型沟道金刚石金属氧化物半导体场效应晶体管（MOSFET）的场效应迁移率μFE和界面态密度Dit与磷浓度（NP）的关系。反型沟道金刚石MOSFET具有宽带隙、高击穿电场、高载流子迁移率和高热导率等优良特性，在高频、大电流和高压器件中具有潜在的应用前景。然而，器件设计参数的影响，如NP在n型体和氧化层材料，对反型沟道金刚石MOSFET的电特性尚未报道。在这项研究中，我们制造的反型沟道金刚石MOSFET使用不同的NP值的n型体。对于n型体中NP减少，μFE增加，而Dit减少。使用最低NP为2 × 1015 cm−3的n型体，最大μFE为20 cm 2/V·s，最小Dit为1 × 1013 cm−2。
We investigated the phosphorus concentration (NP) dependence of the field-effect mobility μFE and interface state density Dit in inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs). The inversion channel diamond MOSFETs are potentially applicable in high-frequency, high-current, and high-voltage devices because of the material's excellent properties such as a wide bandgap, high breakdown electric field, high carrier mobility, and high thermal conductivity. However, the influences of device design parameters, such as NP in an n-type body and the oxide layer material, on the electrical characteristics of inversion channel diamond MOSFETs have not yet been reported. In this study, we fabricated inversion channel diamond MOSFETs using n-type bodies with various NP values. For decreased NP in the n-type body, μFE was increased, while Dit was decreased. Using the n-type body with the lowest NP of 2 × 1015 cm−3, the maximum μFE of 20 cm2/V·s and the minimum Dit of 1 × 1013 cm−2·eV−1 were obtained. In addition, an inverse correlation was found between μFE and Dit. Specifically, in the low-gate-voltage region of the drain current–gate voltage characteristics, μFE and Dit were strongly inversely correlated. The high Dit suggests that most holes are trapped in the interface state as strong scattering factors in the low-gate-voltage region. Lower Dit values are therefore important for obtaining higher μFE values, the same as in Si and SiC.We investigated the phosphorus concentration (NP) dependence of the field-effect mobility μFE and interface state density Dit in inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs). The inversion channel diamond MOSFETs are potentially applicable in high-frequency, high-current, and high-voltage devices because of the material's excellent properties such as a wide bandgap, high breakdown electric field, high carrier mobility, and high thermal conductivity. However, the influences of device design parameters, such as NP in an n-type body and the oxide layer material, on the electrical characteristics of inversion channel diamond MOSFETs have not yet been reported. In this study, we fabricated inversion channel diamond MOSFETs using n-type bodies with various NP values. For decreased NP in the n-type body, μFE was increased, while Dit was decreased. Using the n-type body with the lowest NP of 2 × 1015 cm−3, the maximum μFE of 20 cm2/V·s and the minimum Dit of 1 × 1013 cm−2...