Current-perpendicular-to-the-plane giant magnetoresistance in spin-valves with AgSn alloy spacers
Current-perpendicular-to-the-plane giant magnetoresistance in spin-valves with AgSn alloy spacers
复制标题
具有 AgSn 合金垫片的旋转阀中电流垂直于平面的巨磁阻
DOI：
10.1063/1.4927511
复制
发表时间：
2015
影响因子：
3.2
通讯作者：
J. Childress
中科院分区：
文献类型：
--
作者：
J. Read;T. Nakatani;N. Smith;Young;B. York;E. Brinkman;J. Childress
我们研究了在电流垂直于平面的磁阻器件中使用AgSn合金作为间隔层。与锡合金化会增加电阻率，但会导致较长的自旋扩散长度（约10nm），因此可以使用薄的银锡隔离片实现较大的磁阻。与Ag薄膜相比，AgSn薄膜在退火后形成更小的晶粒尺寸，粗糙度降低，并且表现出更少的相互扩散，导致交换偏置自旋阀层间磁耦合降低。与银相比，AgSn还显示出更好的耐腐蚀性，这有利于纳米制造，包括磁记录头传感器。在厚度小于12 nm的交换偏置多晶三层中，将AgSn间隔层与co基Heusler合金铁磁体相结合，可在室温下获得高达15%的磁阻值。
We investigate the use of AgSn alloys as the spacer layer in current-perpendicular-to-the-plane magnetoresistance devices. Alloying with Sn increases resistivity but results in a reasonably long (>10 nm) spin-diffusion length, so large magnetoresistance can be achieved with thin AgSn spacers. Compared to Ag thin films, AgSn forms smaller grain sizes, reduced roughness, and exhibits less interdiffusion upon annealing, resulting in decreased interlayer magnetic coupling in exchange biased spin-valves. AgSn also shows improved corrosion resistance compared to Ag, which is advantageous for nanofabrication, including magnetic recording head sensors. Combining a AgSn spacer with Co-based Heusler alloy ferromagnet in an exchange biased, polycrystalline trilayer thinner than 12 nm results in magnetoresistance values up to 15% at room temperature.