Single crystal growth of Gallium Nitride by slow-cooling of its congruent melt under high pressure

Single crystal growth of Gallium Nitride by slow-cooling of its congruent melt under high pressure
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高压同质熔体缓冷生长氮化镓单晶

DOI:
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发表时间:
2005
期刊:
Proceedings of Joint 20th AIRAPT-43th EHPRG
影响因子:
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通讯作者:
W.Utsumi,H.Saitoh,H.Kaneko,K.Kiriyama and K.Aoki
W.Utsumi,H.Saitoh,H.Kaneko,K.Kiriyama and K.Aoki
中科院分区:
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文献类型:
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作者:
内海渉;齋藤寛之;谷口尚;青木勝敏;W.Utsumi,H.Saitoh,H.Kaneko,K.Kiriyama and K.Aoki

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