A high efficiency dual‐band outphasing power amplifier design
A high efficiency dual‐band outphasing power amplifier design
复制标题
DOI：
10.1002/mmce.22515
复制
发表时间：
2020-12
期刊：
影响因子：
--
通讯作者：
Weiwei Wang;Shichang Chen;Jialin Cai;X. Zhou;W. Chan;Gaofeng Wang
中科院分区：
文献类型：
--
作者：
Weiwei Wang;Shichang Chen;Jialin Cai;X. Zhou;W. Chan;Gaofeng Wang
本文提出了一种新的设计方法，双频异相功率放大器（PA）与回退效率增强。在满足Chireix移相功率放大器负载调制要求的同时，将传统结构中的四分之一波长阻抗倒相器替换为双频阻抗倒相器。此外，两个吸收晶体管寄生电容的双频带电抗补偿网络被战略性地放置。这减轻了异相PA的固有电抗性负载问题，并且还降低了电路复杂性。本文描述了所提出设计的全面理论公式，并通过用于LTE和5G应用的双频（2.6和3.5 GHz）PA原型的实现进行了验证。该放大器基于两个10-W GaN HEMT构建，在2.6和3.5 GHz时分别实现44.6和43.5 dBm的最大功率以及超过71%和64%的相关漏极效率。在6 dB输出回退点，相应的效率分别达到58.4%和50.1%。据作者所知，这是第一款双频异相PA，其性能可与Doherty等其他负载调制型PA相媲美。
This article proposes a novel design methodology for dual‐band outphasing power amplifiers (PAs) with back‐off efficiency enhancement. While satisfying load modulation requirements of the Chireix outphasing PA, this work replaces the quarter‐wavelength impedance inverter in the classical structure with a dual‐band impedance inverter. In addition, two dual‐band reactance compensation networks that absorb the transistor parasitic capacitance are strategically placed. This mitigates the intrinsic reactive loading problem of the outphasing PA and also reduces circuit complexity. A comprehensive theoretical formulation of the proposed design is described and verified through the implementation of a dual‐band (2.6 and 3.5 GHz) PA prototype intended for LTE and 5G applications. This amplifier is built upon two 10‐W GaN HEMTs, and achieves a maximum power of 44.6 and 43.5 dBm with over 71% and 64% associated drain efficiencies at 2.6 and 3.5 GHz, respectively. At the 6 dB output back‐off points, corresponding efficiencies reached 58.4% and 50.1%, respectively. According to the best of authors' knowledge, this is the first dual‐band outphasing PA work with comparable performances to other load modulation type PA such as the Doherty.