Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium-Nitride Gate for High-Performance Fin-Type Metal-Oxide-Semiconductor Field-Effect Transistors
Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium-Nitride Gate for High-Performance Fin-Type Metal-Oxide-Semiconductor Field-Effect Transistors
复制标题
用于高性能鳍式金属氧化物半导体场效应晶体管的四（二甲氨基）钛前驱体原子层沉积和物理气相沉积氮化钛栅极的实验比较
DOI：
10.1143/jjap.51.04da05
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发表时间：
2012
影响因子：
1.5
通讯作者：
et al
中科院分区：
文献类型：
--
作者：
Tetsuro Hayashida;et al
