RESONANT MULTIPHOTON IONIZATION VIA FANO AUTOIONIZATION FORMALISM
RESONANT MULTIPHOTON IONIZATION VIA FANO AUTOIONIZATION FORMALISM
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DOI：
10.1103/physreva.12.1903
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发表时间：
1975-01-01
影响因子：
2.9
通讯作者：
FENEUILLE, S
中科院分区：
文献类型：
--
作者：
ARMSTRONG, L;BEERS, BL;FENEUILLE, S
我们介绍了一个类比之间的理论所描述的Fano和理论的某些国家（“伪自电离态”）的辐射原子的自电离状态。这些“伪自电离态”被用来获得一些定性的结果，共振多光子电离概率为几个实验安排。这种方法明确了非共振过程在确定共振多光子电离线形状中的重要性。
We introduce an analogy between the theory of autoionizing states as described by Fano and the theory of certain states (" pseudo-autoionizing states") of an irradiated atom. These" pseudo-autoionizing states" are used to obtain a number of qualitative results concerning resonant multiphoton ionization probabilities for several experimental arrangements. This method makes clear the importance of nonresonant processes in determining resonant multiphoton ionization line shapes.