Noninvasive Surface Coverage Determination of Chemically Modified Conical Nanopores that Rectify Ion Transport
Noninvasive Surface Coverage Determination of Chemically Modified Conical Nanopores that Rectify Ion Transport
复制标题
DOI：
10.1021/ac301791e
复制
发表时间：
2012-08-21
影响因子：
7.4
通讯作者：
Wang, Gangli
中科院分区：
文献类型：
--
作者：
Liu, Juan;Wang, Dengchao;Wang, Gangli
表面修饰将改变纳米通道器件信号限制区域的表面电荷密度（SCD）。通过求解泊松和能斯特-普朗克方程来拟合模拟中测量的 i-V 曲线，可以无创地量化 SCD 以及表面覆盖率。胺封端的有机硅烷用于对单个圆锥形纳米孔进行化学改性。表面电荷的密度和极性由官能团的质子化-去质子化决定，通过溶液pH值调节。发现高电导率状态下的整流电流与纳米孔口附近的 SCD 成正比。这种相关性允许非侵入性地测定单个圆锥形纳米孔的 SCD 和表面覆盖度。
Surface modification will change the surface charge density (SCD) at the signal-limiting region of nanochannel devices. By fitting the measured i-V curves in simulation via solving the Poisson and Nernst-Planck equations, the SCD and therefore the surface coverage can be noninvasively quantified. Amine terminated organosilanes are employed to chemically modify single conical nanopores. Determined by the protonation-deprotonation of the functional groups, the density and polarity of surface charges are adjusted by solution pH. The rectified current at high conductivity states is found to be proportional to the SCD near the nanopore orifice. This correlation allows the noninvasive determination of SCD and surface coverage of individual conical nanopores.