Fabrication of GaN light emitting diode membrane on Si substrate for MEMS applications
Fabrication of GaN light emitting diode membrane on Si substrate for MEMS applications
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DOI：
10.1007/s00542-010-1151-4
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
M. Wakui;H. Sameshima;F. Hu;K. Hane
中科院分区：
文献类型：
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作者：
M. Wakui;H. Sameshima;F. Hu;K. Hane
GaN膜结构是为微机电系统（MEMS）制造的。GaN和Si半导体的组合是未来MEMS的希望。然而，由于材料性质的不同，使用GaN半导体制造MEMS仍然受到限制。在这里，一个简单的GaN半导体薄膜沉积在Si衬底上进行了研究。采用分子束外延和金属有机化学气相沉积法生长GaN晶体。研究了所制备的GaN发光二极管（LED）的基本特性。从背面刻蚀Si衬底，制作了可用于微全分析系统的独立GaN LED薄膜。从这些实验结果，它表明，GaN LED薄膜是可行的MEMS应用。
GaN membrane structures are fabricated for micro-electro-mechanical systems (MEMS). The combination of GaN and Si semiconductors is promising for future MEMS. However, due to the different material properties, the fabrication of MEMS using GaN semiconductor is still limited. Here, a simple membrane of GaN semiconductor deposited on Si substrate was investigated. The GaN crystal was grown by molecular beam epitaxy and metal organic chemical vapor deposition. The basic properties of the fabricated GaN light emitting diode (LED) were investigated. Etching the Si substrate from the backside, a freestanding GaN LED membrane was fabricated which can be useful for micro total analysis system. From those experimental results, it was shown that the GaN LED membrane was feasible for MEMS applications.