Coulomb blockade in silicon based structures at temperatures up to 50 K
Coulomb blockade in silicon based structures at temperatures up to 50 K
复制标题
硅基结构中温度高达 50 K 时的库仑封锁
DOI：
10.1063/1.109972
复制
发表时间：
1993
影响因子：
4
通讯作者：
T. Whall
中科院分区：
文献类型：
--
作者：
D. Paul;J. Cleaver;H. Ahmed;T. Whall
在温度高达50 K时，在掺杂硅锗的材料中制备的结构的电流-电压特性中观察到库仑阻塞。这与估计的10 aF的有效隧道电容一致，该电容明显小于由Al或GaAs/AlGaAs异质结构制成的隧道结的电容。
Coulomb blockade has been observed in the current‐voltage characteristics of structures fabricated in silicon germanium δ‐doped material at temperatures up to 50 K. This is consistent with the estimated effective tunnel capacitance of 10 aF which is significantly smaller than the reported capacitances of tunnel junctions made from Al or GaAs/AlGaAs heterostructures.