Epitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor Applications
Epitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor Applications
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用于垂直晶体管应用的 p-Ge (100) 上高 Sb 掺杂 Ge 的外延生长
DOI：
10.1149/10202.0147ecst
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Fukata Naoki
中科院分区：
文献类型：
--
作者：
Saputro Rahmat Hadi;Matsumura Ryo;Fukata Naoki
为了实现纳米结构的垂直Ge晶体管，我们研究了用分子束外延技术在p型Ge（100）衬底上生长Sb掺杂的Ge层。详细讨论了沉积过程中掺杂源温度变化对外延Ge层结晶度和电学性能的影响。在Tdop的掺杂：325-400ºC实现n型Ge层，这由Ge n+/p结二极管的整流行为指示。此外，更高的Tdop。（~ 400ºC）导致电流开-关比改善，同时在高掺杂剂浓度下保持结晶度。
To realize nanostructured vertical Ge transistors, we investigated the formation of Sb-doped Ge layers on p-type Ge (100) substrate by molecular beam epitaxy. The effect of dopant source temperature variations during deposition on the crystallinity and electrical properties of epitaxial Ge layers was discussed in detail. The doping at Tdop.: 325-400ºC realizes n-type Ge layers, that indicated by the rectification behavior of the Ge n+/p junction diodes. Moreover, higher Tdop.(~ 400ºC) resulted in current on-off ratio improvement while maintaining the crystallinity at high dopant concentration.