Intrinsic microcrystalline silicon: A new material for photovoltaics
Intrinsic microcrystalline silicon: A new material for photovoltaics
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DOI：
10.1016/s0927-0248(99)00140-3
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发表时间：
2000-04
影响因子：
6.9
通讯作者：
O. Vetterl;F. Finger;R. Carius;P. Hapke;L. Houben;O. Kluth;A. Lambertz;A. Mück;B. Rech;
中科院分区：
文献类型：
--
作者：
O. Vetterl;F. Finger;R. Carius;P. Hapke;L. Houben;O. Kluth;A. Lambertz;A. Mück;B. Rech;
采用等离子体增强化学气相沉积（PECVD）方法制备了微晶硅（μc-Si：H）材料，并将其用作太阳电池的吸收层材料。沉积工艺已被调整，以实现高沉积速率和优化的太阳能电池性能。特别地，已经发现晶体与非晶体积分数的适度变化影响电子材料和太阳能电池的性质。通过将硅烷的工艺气体混合物改变为氢气，可以容易地实现这种变化。最好的电池性能被发现的材料附近的过渡到无定形生长制度。在此优化条件下，2μm厚的μc-Si：H单电池的材料效率达到7.5%，a-Si：H/μc-Si：H叠层电池的材料效率达到12%。
Microcrystalline silicon (μc-Si:H) prepared by plasma-enhanced chemical vapor deposition (PECVD) has been investigated as material for absorber layers in solar cells. The deposition process has been adjusted to achieve high deposition rates and optimized solar cell performance. In particular, already moderate variations of the crystalline vs. amorphous volume fractions were found to effect the electronic material – and solar cell properties. Such variation is readily achieved by changing the process gas mixture of silane to hydrogen. Best cell performance was found for material near the transition to the amorphous growth regime. With this optimized material efficiencies of 7.5% for a 2μm thick μc-Si:H single solar cell and 12% for an a-Si:H/μc-Si:H stacked solar cell have been achieved.