Phase diagram of coulomb interactions across the metal-insulator transition in Si:B.
Phase diagram of coulomb interactions across the metal-insulator transition in Si:B.
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Si:B 中金属-绝缘体转变过程中库仑相互作用的相图。
DOI：
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发表时间：
2004
影响因子：
8.6
通讯作者：
Mark Lee
中科院分区：
文献类型：
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作者：
Mark Lee
对 Si:B 中 T=0 K 附近的单粒子态密度 (DOS) 的测量用于构建跨金属-绝缘体转变临界密度 n(c) 的库仑相互作用的能量密度相图。发现绝缘体和金属仅在由库仑能量确定的相界 e*(|n/n(c)-1|) 以下才可区分。上面的 epsilon* 是一种混合状态，其中与 n(c) 等距的金属和绝缘体无法从它们的 DOS 结构中区分出来。这些数据意味着 n(c) 处的筛选半径有所不同，这可能预示着相互作用驱动的热力学状态变化。
Measurements of the single-particle density of states (DOS) near T=0 K in Si:B are used to construct an energy-density phase diagram of Coulomb interactions across the critical density n(c) of the metal-insulator transition. Insulators and metals are found to be distinguishable only below a phase boundary epsilon*(|n/n(c)-1|) determined by the Coulomb energy. Above epsilon* is a mixed state where metals and insulators equidistant from n(c) cannot be distinguished from their DOS structure. The data imply a diverging screening radius at n(c), which may signal an interaction-driven thermodynamic state change.