Top-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based Melt
Top-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based Melt
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使用 Si-Cr 基熔体顶晶溶液生长 4H-SiC 块状晶体
DOI：
10.4028/www.scientific.net/msf.717-720.61
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
K. Kamei
中科院分区：
文献类型：
--
作者：
H. Daikoku;M. Kado;H. Sakamoto;H. Suzuki;T. Bessho;K. Kusunoki;N. Yashiro;N. Okada;K. Moriguchi;K. Kamei
我们通过弯液面形成技术生长出了高质量的长圆柱形（12毫米厚）4H-SiC块状晶体，该技术首次应用于块状SiC的溶液生长。它通过抑制寄生反应（例如籽晶周围的多晶沉淀）来实现长期生长。此外，我们可以通过调整弯月面高度将生长角度控制在-22°到61°之间。生长的圆柱形晶体的厚度为12毫米，这是迄今为止报道的最大厚度，对应的生长速率为0.6毫米/小时。 (000-1) C 面上保持平滑的形态生长。在横截面透射光学显微镜图像中，观察到很少的溶剂夹杂物和空隙。 XRD 测量表明，生长晶体的 FWHM 值与籽晶的 FWHM 值几乎相同。
We have grown high-quality long cylindrical (12 mm thick) 4H-SiC bulk crystals by the meniscus formation technique, which was first applied for the solution growth of bulk SiC. It enabled long-term growth by suppressing parasitic reactions such as polycrystal precipitation around the seed crystal. In addition, we could control the growth angle from −22° to 61° by adjusting the meniscus height. The thickness of the grown cylindrical crystals was 12 mm, which is the largest reported until now, and corresponded to a growth rate of 0.6 mm/h. Smooth morphology growth was maintained on the (000-1) C-face. In cross-sectional transmission optical microscopy images, few solvent inclusions and voids were observed. XRD measurements revealed that the FWHM values of the grown crystals were almost the same as those of the seed crystal.