Fabrication of Schottky Junction Between Au and SrTiO3
Fabrication of Schottky Junction Between Au and SrTiO3
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Au 和 SrTiO3 之间肖特基结的制造
DOI：
10.1143/jjap.40.3153
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
H. Uwe
中科院分区：
文献类型：
--
作者：
A. Inoue;K. Izumisawa;H. Uwe
采用简单的表面处理方法，在Au和La掺杂的SrTiO 3之间制备了具有高整流比的肖特基结。高La掺杂（5%）SrTiO 3单晶在O2气氛中在约1000°C下退火1 h，并在HNO 3中蚀刻5 min以上。HNO 3蚀刻在含有N2的地球仪盒中进行，以防止空气污染。处理后，在真空（10-7托）中用电子枪蒸发器在SrTiO 3表面上沉积Au。结的电流-电压特性显示出优良的整流性能，虽然结既不使用退火也不蚀刻SrTiO 3表现出高的泄漏电流在反向电压。在1 V时结的整流比大于6个数量级，并且在电流-电压谱中没有滞后。电流的对数与正向偏置电压成线性关系。结的理想因子估计约为1.68。这些结果表明，如果防止空气污染，可以通过简单的工艺，如在氧气气氛中退火和表面酸蚀刻，获得良好的肖特基结。
A Schottky junction with a high rectification ratio between Au and La-doped SrTiO3 has been fabricated using a simple surface treatment. Highly La-doped (5%) SrTiO3 single crystals are annealed in O2 atmosphere at about 1000°C for 1 h and etched in HNO3 for more than five min. The HNO3 etching is performed in a globe box containing N2 to prevent pollution from the air. After the treatment, Au is deposited on the SrTiO3 surface in a vacuum (∼10-7 Torr) with an e-gun evaporator. The current voltage characteristics of the junction have shown excellent rectification properties, although junctions using neither annealed nor etched SrTiO3 exhibit high leak current in reverse voltage. The rectification ratio of the junction at 1 V is more than six orders of magnitude and there is no hysteresis in the current voltage spectra. The logarithm of the current is linear with the forward bias voltage. The ideal factor of the junction is estimated to be about 1.68. These results suggest that, if prevented from being pollution by the air, a good Schottky junction can be obtained by easy processes such as annealing in oxygen atmosphere and surface etching with acid.