Identification of Mn dopant in the structure of TlInS2 layered Semiconductor
Identification of Mn dopant in the structure of TlInS2 layered Semiconductor
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TlInS2层状半导体结构中Mn掺杂剂的识别
DOI：
10.1088/2053-1591/ab063e
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
Faik A. Mikailzade and MirHasan Yu Seyidov
中科院分区：
文献类型：
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作者：
Esra Okumus;Sibel T. Ozturk;Yurii M. Chumakov;Arzu I. Nadjafov; Nazim T. Mamedov;Tofiq G. Mammadov;Kazuki Wakita;Yong-Gu Shim; Faik A. Mikailzade and MirHasan Yu Seyidov
采用x射线衍射（XRD）和电子顺磁共振（EPR）研究了掺杂0.3% Mn杂质的TlInS 2层状半导体的结构。通过实验探讨了Mn掺杂剂在tlin2晶体结构中的局部环境。测定了mn离子与邻近原子的原子间距离和有效价态。xrd研究表明，Mn离子在tlins2中的有效价接近+ 4。结果表明，TlInS 2+ 0.3% Mn的EPR谱由一条由相互作用自旋产生的宽共振线和一组由顺磁性产生的超精细结构线组成
The structure of TlInS 2 layered semiconductor doped with 0.3% concentration of Mn impurity has been investigated by using x-ray diffraction (XRD) and Electron Paramagnetic Resonance (EPR) spectroscopy. The experiments were carried out to probe the local environment surrounding the Mn dopants in the crystal structure of TlInS 2. The interatomic distances between Mn-ions and neighboring atoms and effective valence of Mn-ions were determined. XRD-investigation indicated that the effective valence of Mn ions in TlInS 2 is close to+ 4. It has been obtained that the EPR spectra of TlInS 2+ 0.3% Mn consist of a broad resonance line stemming from interacting spins and a set of hyperfine structure lines originating from the paramagnetic