On reducing the patch size of U-slot and L-probe wideband patch antennas

On reducing the patch size of U-slot and L-probe wideband patch antennas
复制标题

减小U型槽和L型探头宽带贴片天线贴片尺寸的研究

DOI:
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发表时间:
2000
期刊:
2000 IEEE-APS Conference on Antennas and Propagation for Wireless Communications (Cat. No.00EX380)
影响因子:
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通讯作者:
D. Chatterjee
D. Chatterjee
中科院分区:
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文献类型:
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作者:
A. Shackelford;Kai;D. Chatterjee

文献摘要

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同轴馈电U槽矩形贴片天线和L探头馈电矩形贴片天线是最近发展起来的两种单层单贴片宽带微带贴片天线。在这两种情况下,通过U形槽或L探头在主贴片共振附近引入第二个共振。U形槽或L探头还引入了一个电容,它抵消了同轴馈电的电感,允许使用厚衬底(0.08-0.1spl lambda//sub0/),其中/spl lambda//sub0/是自由空间波长。使用泡沫基板(带有/SPL EPSIV//SUB R//SPL AP/1),这些天线在基模下工作的阻抗带宽在30-40%范围内,具有稳定的方向图和增益特性。这些带宽对大多数无线通信应用程序来说绰绰有余。基模的谐振长度约为自由空间波长的一半。对于许多应用程序,需要减小修补程序的大小以节省空间。为此,人们对斑块缩小技术进行了广泛的研究。一种方法使用微波衬底,值为/SPL epsiv//subr/>1。另一种方法在零电场位置使用短路墙,使谐振长度减半,从而产生四分之一波贴片。还有一种方法是在馈电附近使用短路引脚。这将电容耦合引入贴片谐振,从而增加了有效/SPL epsiv//subr/,并降低了频率,这意味着对于给定的谐振频率,贴片尺寸变小。本文给出了其中一些研究的结果。
The coaxially-fed U-slot rectangular patch antenna and the L-probe fed rectangular patch antenna are two recently developed single-layer single-patch wideband microstrip patch antennas. In both cases, a second resonance is introduced near the main patch resonance, either by the U-slot or by the L-probe. The U-slot or the L-probe also introduce a capacitance which counteracts the inductance of the coaxial feed, allowing for the use of thick substrates (0.08-0.1 /spl Lambda//sub 0/) where /spl Lambda//sub 0/ is the free space wavelength. Using foam substrates (with /spl epsiv//sub r//spl ap/1) the impedance bandwidths of these antennas operating in the fundamental mode are in the 30-40% range, with stable pattern and gain characteristics. These bandwidths are more than sufficient for most wireless communication applications. The resonant length of the fundamental mode is about half of the free space wavelength. For many applications, it is desirable to reduce the size of the patch to conserve real estate space. For this reason, there have been extensive investigations on patch size reduction techniques. One method uses microwave substrates with values of /spl epsiv//sub r/>1. Another method uses a shorting wall at the location of zero electric field so that the resonant length is halved, resulting in the quarter-wave patch. Yet another method uses a shorting pin near the feed. This introduces capacitive coupling to the patch resonance, thereby increasing the effective /spl epsiv//sub r/, and reducing the frequency, which means that, for a given resonant frequency, the patch size becomes smaller. In this paper, results of some of these investigations are presented.