The Anomalous Behavior of Silicon During Nanoindentation
The Anomalous Behavior of Silicon During Nanoindentation
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纳米压痕过程中硅的异常行为
DOI：
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发表时间：
1991
期刊：
影响因子：
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通讯作者：
G. Pharr
中科院分区：
文献类型：
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作者：
G. Pharr
在硅的低载荷压痕过程中，会出现两种不同的现象，这使得硅的行为与大多数材料明显不同。首先，硅是仅有的几种硬度超过将其转变为更致密的晶体（或非晶）形式所需压力的材料之一，因此，在压痕过程中会发生可逆的压力诱导相变。这种转变增强了材料的导电性，并在压头周围形成了一个像软金属一样流动的区域。第二，当用布氏或维氏压头在小于100 mN的载荷下压入时，硅破裂，即，通常用于纳米压痕实验的载荷。这两种现象，这占了一些不寻常的功能，在压痕载荷-位移行为，记录和讨论。
Two separate phenomena occur during the low-load indentation of silicon which make its behavior distinctly different from that of most materials. First, silicon is one of only a very few materials whose hardness exceeds the pressure needed to transform it to a denser crystalline (or amorphous) form, and because of this, a reversible, pressure-induced phase transformation occurs during indentation. The transformation enhances the electrical conductivity of the material and creates a region around the indenter which flows like a soft metal. Second, silicon cracks when indented by a Berkovich or Vickers indenter at loads of less than 100 mN, i.e., loads typically used in nanoindentation experiments. These two phenomena, which account for a number of unusual features in the indentation load-displacement behavior, are documented and discussed.