Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy
Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy
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DOI：
10.1063/1.5098965
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发表时间：
2019-07
影响因子：
4
通讯作者：
K. Kanegae;H. Fujikura;Y. Otoki;Taichiro Konno;Takehiro Yoshida;M. Horita;T. Kimoto;J. Suda
中科院分区：
文献类型：
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作者：
K. Kanegae;H. Fujikura;Y. Otoki;Taichiro Konno;Takehiro Yoshida;M. Horita;T. Kimoto;J. Suda
我们研究了无石英氢化物-气相外延（QF-HVPE）生长的同外延n型GaN层的深能级，其中检测到三个电子和八个空穴陷阱。在qf - hvpe生长的GaN层中观察到的主要电子和空穴陷阱分别是E3 （EC−0.60 eV）和H1 （eV + 0.87 eV）。我们发现qf - hvpe生长的GaN层的E3陷阱密度（~ 1014 cm−3）与movpe生长的GaN层相当，而qf - hvpe生长的GaN层的H1陷阱密度（~ 1014 cm−3）远小于具有低残余碳生长条件的movpe生长的GaN层。对qf - hvpe生长的GaN层的详细分析表明，H1陷阱密度几乎等于碳杂质浓度，除了碳杂质外，几乎没有其他补偿Si供体的杂质在qf - hvpe生长的GaN层中被检测到。
We studied deep levels in quartz-free hydride-vapor-phase epitaxy (QF-HVPE)-grown homoepitaxial n-type GaN layers within which three electron and eight hole traps were detected. The dominant electron and hole traps observed in the QF-HVPE-grown GaN layers were E3 (EC − 0.60 eV) and H1 (EV + 0.87 eV), respectively. We found that the E3 trap density of QF-HVPE-grown GaN (∼1014 cm−3) was comparable with that of MOVPE-grown GaN layers, whereas the H1 trap density of QF-HVPE-grown GaN (∼1014 cm−3) was much smaller than that of an MOVPE-grown GaN layer with a low-residual-carbon growth condition. A detailed analysis of the QF-HVPE-grown GaN layers revealed that the H1 trap density is almost equal to the carbon impurity concentration and other impurities that compensate the Si donors besides the carbon impurity were hardly detected in the QF-HVPE-grown GaN layers.