Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation
Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation
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DOI：
10.1063/1.4921848
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发表时间：
2015-05
影响因子：
4
通讯作者：
T. Brazzini;M. Casbon;Huarui Sun;M. Uren;J. Lees;P. Tasker;H. Jung;H. Blanck;M. Kuball
中科院分区：
文献类型：
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作者：
T. Brazzini;M. Casbon;Huarui Sun;M. Uren;J. Lees;P. Tasker;H. Jung;H. Blanck;M. Kuball
利用电致发光显微镜和光谱技术研究了AlGaN/GaN高电子迁移率晶体管在射频和直流工作时的热电子。在相同的平均电流下，与DC相比，在RF操作下测得的EL强度降低，表明较低的热电子密度。这是通过在RF测量中使用的测量负载线上平均DC EL强度来解释的，给出了合理的一致性。此外，与DC相比，在RF下热电子温度低达15%，这再次至少部分地可通过沿特定负载线沿着的加权平均来解释。然而，在RF下的峰值电子温度发生在高VDS和低IDS，其中EL是微不足道的，这表明器件的RF和DC应力之间的任何磨损差异将取决于热载流子和场驱动的退化机制之间的平衡。
Hot electrons in AlGaN/GaN high electron mobility transistors are studied during radio frequency (RF) and DC operation by means of electroluminescence (EL) microscopy and spectroscopy. The measured EL intensity is decreased under RF operation compared to DC at the same average current, indicating a lower hot electron density. This is explained by averaging the DC EL intensity over the measured load line used in RF measurements, giving reasonable agreement. In addition, the hot electron temperature is lower by up to 15% under RF compared to DC, again at least partially explainable by the weighted averaging along the specific load line. However, peak electron temperature under RF occurs at high VDS and low IDS where EL is insignificant suggesting that any wear-out differences between RF and DC stress of the devices will depend on the balance between hot-carrier and field driven degradation mechanisms.