Flip-chip assembled GaAs pHEMT Ka-band oscillator
Flip-chip assembled GaAs pHEMT Ka-band oscillator
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DOI：
10.1109/lmwc.2006.887272
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发表时间：
2007-01-01
影响因子：
3
通讯作者：
Yeh, Tsung-Jung
中科院分区：
文献类型：
--
作者：
Huang, Wei-Kuo;Liu, Yu-An;Yeh, Tsung-Jung
在这封信中，我们提出了一个Ka波段振荡器与倒装芯片组装0.15 μ m栅pHEMT。以0.15 μ m栅GaAspHEMT为例，考虑Au-Sn柱凸点过渡，在Al 2 O3衬底上倒装组装GaAspHEMT，设计并制作了无源器件和共面波导连接。测得的输出信号为27.55 GHz;输出功率为1.87 dBm，相位噪声为-109 dBc/Hz（1 MHz偏移）。据我们所知，这是第一个在Ka波段倒装芯片组装的pHEMT振荡器。
In this letter, we present a Ka-band oscillator with flip-chip assembled 0.15-mu m-gate pHEMT. With a characterized 0.15-mu m-gate GaAs pHEMT and consideration of the Au-Sn pillar bump transition, the GaAs pHEMT was flip-chip assembled on Al2O3 substrate where the passive components and coplanar waveguide connection were designed and fabricated. The measured output signal was at 27.55 GHz; with an output power of 1.87 dBm and a phase noise of -109 dBc/Hz at 1-MHz offset, respectively. To our knowledge, this is the first flip-chip assembled pHEMT oscillator in the Ka-band.