Electron Beam Infrared Nano-Ellipsometry of Individual Indium Tin Oxide Nanocrystals
Electron Beam Infrared Nano-Ellipsometry of Individual Indium Tin Oxide Nanocrystals
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DOI：
10.1021/acs.nanolett.0c02772
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发表时间：
2020-11-11
期刊：
影响因子：
10.8
通讯作者：
Camden, Jon P.
中科院分区：
文献类型：
--
作者：
Olafsson, Agust;Busche, Jacob A.;Camden, Jon P.
利用电子能量单色化和像差校正的最新进展，我们使用电子能量损失谱（EELS）记录单个锡掺杂氧化铟纳米晶体的空间分辨红外等离子体光谱。测量表面和体等离子体激元响应作为从1-10原子百分比的锡掺杂浓度的函数。这些结果进行了比较，理论模型，阐明了光谱失谐的相同的表面等离子体共振功能时，测量从超然和穿透探头的几何形状。我们还展示了一种独特的方法来检索通过EELS个别半导体纳米晶体的基本介电参数。这种方法，没有从合奏平均，说明了潜在的电子束椭偏测量材料，不能准备在散装形式或薄膜。
Leveraging recent advances in electron energy monochromation and aberration correction, we record the spatially resolved infrared plasmon spectrum of individual tin-doped indium oxide nanocrystals using electron energy-loss spectroscopy (EELS). Both surface and bulk plasmon responses are measured as a function of tin doping concentration from 1-10 atomic percent. These results are compared to theoretical models, which elucidate the spectral detuning of the same surface plasmon resonance feature when measured from aloof and penetrating probe geometries. We additionally demonstrate a unique approach to retrieving the fundamental dielectric parameters of individual semiconductor nanocrystals via EELS. This method, devoid from ensemble averaging, illustrates the potential for electron-beam ellipsometry measurements on materials that cannot be prepared in bulk form or as thin films.