Microstructure and electrical properties of co-sputtered Cu embedded amorphous SiC
Microstructure and electrical properties of co-sputtered Cu embedded amorphous SiC
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DOI：
10.1016/j.matlet.2016.04.144
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发表时间：
2016-09
影响因子：
3
通讯作者：
Junqing Fan;Liudi Jiang;L. Zhong;R. Gowers;K. Morgan;C. Groot
中科院分区：
文献类型：
--
作者：
Junqing Fan;Liudi Jiang;L. Zhong;R. Gowers;K. Morgan;C. Groot
研究了共溅射Cu嵌入非晶SiC的性能。通过温度相关测量以及有效介质近似模型，分析了微观结构特征对 Cu 体积百分比在 0% 至 57% 之间的 SiC 薄膜导电的影响。 Cu 嵌入非晶 SiC 中的导电归因于隧道机制。使用嵌入 Cu 的非晶 SiC 复合材料作为介电层，从特意制造的微电容器中测量了嵌入 Cu 的非晶 SiC 复合材料的介电常数，结果表明介电常数随着 Cu 体积％的增加而降低。金属电极（即 Cu 和 Au）与嵌入 Cu 的非晶 SiC 复合材料之间的电接触导致肖特基发射。
The properties of co-sputtered Cu embedded amorphous SiC were studied. The effect of the microstructure features on the electrical conduction of the SiC films, with Cu volume% between 0% and 57%, was analysed by temperature dependent measurements, along with an effective-medium approximation model. The electrical conduction in Cu embedded amorphous SiC, was attributed to the tunnelling mechanism. Dielectric constants of the Cu embedded amorphous SiC composites were measured from purposely fabricated micro-capacitors using Cu embedded amorphous SiC composites as the dielectric layer, showing a decrease in dielectric constant with increasing Cu volume%. The electrical contacts between metal electrodes, i.e. Cu and Au, and Cu embedded amorphous SiC composites resulted in Schottky emission.