Performance Optimization of GaAs-Based Vertical-Cavity Surface-Emitting Transistor-Lasers
Performance Optimization of GaAs-Based Vertical-Cavity Surface-Emitting Transistor-Lasers
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GaAs 基垂直腔表面发射晶体管激光器的性能优化
DOI：
10.1109/lpt.2015.2390298
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发表时间：
2015
影响因子：
2.6
通讯作者：
M. Akram
中科院分区：
文献类型：
--
作者：
Y. Xiang;Carl Reuterskiold;X. Yu;Chen Yang;T. Zabel;M. Hammar;M. Akram
我们报告的优化p-n-p型垂直腔面发射晶体管激光器的基础上的AlGaAs/GaAs异质结双极晶体管和InGaAs/GaAs垂直腔面发射激光器（VCSEL）之间的融合使用外延再生长工艺。它示出了基区的适当设计如何可以将晶体管的工作范围扩展到远远超过激射阈值，从而导致典型的晶体管激光器的工作特性，包括毫瓦范围的输出功率，毫安范围的基极阈值电流，在激光器工作下的创纪录的低功耗，以及高达至少60 °C的连续波工作。在高基极电流和/或发射极-集电极电压的限制下，伴随着光输出功率的淬灭，集电极电流特性的明显击穿被解释为与量子阱带填充有关。
We report on the optimization of p-n-p-type vertical-cavity surface-emitting transistor-lasers based on the fusion between an AlGaAs/GaAs heterojunction bipolar transistor and an InGaAs/GaAs vertical-cavity surface-emitting laser (VCSEL) using an epitaxial regrowth process. It is shown how a proper design of the base region can extend the transistor active range of operation well beyond lasing threshold, thereby resulting in typical transistor laser operational characteristics including milliwatt-range output power, milliampere-range base threshold current, record low-power dissipation under laser operation, and continuous-wave operation up to at least 60 °C. A pronounced breakdown in the collector current characteristics in the limit of high base current and/or emitter-collector voltage accompanied by a quenching of the optical output power is interpreted as being related to quantum well band filling.