The temperature and size effect on the electrical resistivity of Cu/V multilayer films
The temperature and size effect on the electrical resistivity of Cu/V multilayer films
复制标题
温度和尺寸对Cu/V多层薄膜电阻率的影响
DOI：
10.1016/j.actamat.2016.12.018
复制
发表时间：
2017
期刊：
影响因子：
9.4
通讯作者：
Fu E. G.
中科院分区：
文献类型：
--
作者：
Wang P. P.;Wang X. J.;Du J. L.;Ren F.;Zhang Y.;Zhang X.;Fu E. G.
The electrical resistivity of sputter-deposited Cu/V multilayer films with different individual layer thicknesses varying from 2.5 to 100 nm was evaluated in the temperature range of 150–300 K. The temperature coefficient of resistivity (TCR) of Cu/V multilayer was compared based on the semi-classical theory of Dimmich model. A new model has been proposed to describe the relationship between the resistivity and the individual layer thickness of metallic multilayer film by considering both interface scattering and grain boundary scattering based on Fuchs-Sondheimer method and Mayadas-Shatzkes method.
