Direct Band-gap Electroluminescence from Strained n-Ge Light Emitting Diodes
Direct Band-gap Electroluminescence from Strained n-Ge Light Emitting Diodes
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应变 n-Ge 发光二极管的直接带隙电致发光
DOI：
10.1149/05009.0305ecst
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
Velha P
中科院分区：
文献类型：
--
作者：
Velha P
报道了在硅衬底上生长锗发光二极管（LED）结构的制备和表征。该结构是圆形梅萨的应变n-Ge蚀刻到一个未掺杂的缓冲区的Ge。电致发光在1.7 μm处表现出几μW的平均功率水平，比先前报道的nW大许多数量级。确定了三个单独的排放机制，可用于解释在其他出版物中遇到的结果。这项工作可能为硅上1.6 μm以上的集成光源和光电探测器开辟道路，并应用于芯片实验室和医疗保健。
The fabrication and characterisation of light emitting diode (LED) structures made of Ge grown on Si substrates is reported. The structures are circular mesa of strained n-Ge etched down to an undoped buffer of Ge. The electroluminescence exhibit average power levels at 1.7 µm of a few µW, many orders of magnitude larger than the nW previously reported. Three individual mechanisms of emission are identified which can be used to interpret the results encountered in other publications. This work potentially opens the route for integrated source of light and photodetectors above 1.6 µm on Si with applications for lab-on-a-chip and healthcare.