Raman Study of Ring Structures of Chemical Vapor Deposited SiO$_{f 2}$ Thin Films
Raman Study of Ring Structures of Chemical Vapor Deposited SiO$_{f 2}$ Thin Films
复制标题
化学气相沉积SiO$_{f 2}$薄膜环结构的拉曼研究
DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
Akihiko Tsuzumitani
中科院分区：
文献类型：
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作者：
T. Nakano;N. Mura;Akihiko Tsuzumitani
拉曼光谱被应用于分析的SiO2薄膜形成的各种化学气相沉积（CVD）方法。在CVD膜中成功地检测到不同尺寸的硅氧烷环结构。发现归因于三元环（R3）的拉曼散射带的强度是膜的特征性特征。沉积方法及其条件明显影响R3带与R4带的强度之比。从腐蚀速率测量的角度考虑，R3结构可以看作是硅氧烷网络的一种缺陷。由拉曼光谱给出的环状结构的构成可能是CVD SiO2介电膜的性质的有用指标。
Raman spectroscopy was applied to the analysis of SiO2 thin films formed by various chemical vapor deposition (CVD) methods. Different sizes of siloxane ring structure were successfully detected in the CVD films. The intensity of the Raman scattering band attributable to the three-membered ring (R3) was found to be a characteristic feature of the film. The deposition method as well as its conditions apparently affected the ratio of the intensity of the R3 band to that of the R4 band. From consideration of the etching rate measurement, it is suggested that the R3 structure can be regarded as a kind of defect of the siloxane network. The constitution of the ring structures given by the Raman spectroscopy is probably a useful indicator of the properties of CVD SiO2 dielectric films.