Low-Temperature Centimeter-Scale Growth of Layered 2D SnS for Piezoelectric Kirigami Devices
Low-Temperature Centimeter-Scale Growth of Layered 2D SnS for Piezoelectric Kirigami Devices
复制标题
DOI：
10.1021/acsnano.3c08826
复制
发表时间：
2023-10-13
期刊：
影响因子：
17.1
通讯作者：
Jung，Yeonwoong
中科院分区：
文献类型：
--
作者：
Yoo，Changhyeon;Adepu，Vivek;Jung，Yeonwoong
单硫化锡（sn）是一种很有前途的压电材料，具有内在的层状结构，使其成为自供电可穿戴和可拉伸设备的吸引力。然而，从实际应用的角度出发，探索大面积合成原理，提高压电器件的输出和制造兼容性是十分必要的。在这项研究中，我们报道了在低至200°C的温度下化学气相沉积（CVD）生长厘米尺度的二维（2D） SnS层，允许与加工一系列聚合物衬底兼容。通过压电力显微镜相图和力电流确证测量证实了在聚酰胺（pi）上直接生长的二维SnS层的固有压电性。此外，厘米级二维SnS层/ pi的结构坚固性允许在其上雕刻复杂的基利伽米图案。基里伽米图案的二维SnS层器件表现出耐受力的压电性，可用于检测人体运动并产生不受应变率变化影响的光电流。这些结果为具有耦合电学和力学性能的实际相关大型器件技术建立了2D SnS层的巨大前景。
Tin monosulfide (SnS) is a promising piezoelectric material with an intrinsically layered structure, making it attractive for self-powered wearable and stretchable devices. However, for practical application purposes, it is essential to improve the output and manufacturing compatibility of SnS-based piezoelectric devices by exploring their large-area synthesis principle. In this study, we report the chemical vapor deposition (CVD) growth of centimeter-scale two-dimensional (2D) SnS layers at temperatures as low as 200 °C, allowing compatibility with processing a range of polymeric substrates. The intrinsic piezoelectricity of 2D SnS layers directly grown on polyamides (PIs) was confirmed by piezoelectric force microscopy (PFM) phase maps and force–current corroborative measurements. Furthermore, the structural robustness of the centimeter-scale 2D SnS layers/PIs allowed for engraving complicated kirigami patterns on them. The kirigami-patterned 2D SnS layer devices exhibited intriguing strain-tolerant piezoelectricity, which was employed in detecting human body motions and generating photocurrents irrespective of strain rate variations. These results establish the great promise of 2D SnS layers for practically relevant large-scale device technologies with coupled electrical and mechanical properties.