Fractional quantum Hall effect in bilayer two-dimensional hole-gas systems.
Fractional quantum Hall effect in bilayer two-dimensional hole-gas systems.
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双层二维空穴气体系统中的分数量子霍尔效应。
DOI：
10.1103/physrevb.54.r5259
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
Cambridge
中科院分区：
文献类型：
--
作者：
A. R. Hamilton;M. Simmons;F. M. Bolton;N. K. Patel;I. S. Millard;J. T. Nicholls;D. A. Ritchie;M. P. C. Laboratory;U. Cambridge;Uk;Toshiba Cambridge Research Centre;Cambridge
研究了高迁移率双层二维空穴-气体系统中的分数和整数量子霍尔效应。大的空穴有效质量抑制隧穿，使我们能够调查的制度，其中的层间和层内相互作用是可比的，没有显着的层间隧穿发生。随着层间分离的减少，我们观察到在总填充因子$\ensuremath{\nu}=\frac{3}{2}$和$\ensuremath{\nu}=1$时双层相关量子霍尔态的形成。我们发现双层$\ensuremath{\nu}=\frac{3}{2}$态会被层间小的载流子密度不平衡迅速破坏，而双层$\ensuremath{\nu}=1$态会不断演化为单层$\ensuremath{\nu}=1$态.
We have studied the fractional and integer quantum Hall effect in high-mobility double-layer two-dimensional hole-gas systems. The large hole effective mass inhibits tunneling, allowing us to investigate the regime in which the interlayer and intralayer interactions are comparable without significant interlayer tunneling occurring. As the interlayer separation is reduced we observe the formation of bilayer-correlated quantum Hall states at total filling factor $\ensuremath{\nu}=\frac{3}{2}$ and $\ensuremath{\nu}=1$. We find that the bilayer $\ensuremath{\nu}=\frac{3}{2}$ state is rapidly destroyed by small carrier density imbalances between the layers, whereas the bilayer $\ensuremath{\nu}=1$ state evolves continuously into the single-layer $\ensuremath{\nu}=1$ state.