Piezoelectric properties of GaAs for application in stress transducers
Piezoelectric properties of GaAs for application in stress transducers
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GaAs 的压电特性在应力传感器中的应用
DOI：
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发表时间：
1991
期刊：
影响因子：
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通讯作者：
K. Fricke
中科院分区：
文献类型：
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作者：
K. Fricke
本文提出了一种基于GaAs和AlxGa(1−x)As的压电式应力传感器。这些材料表现出合理的压电性能，由于基于GaAs的集成电路已经高度成熟，它们是一种有前途的集成应力传感器的选择。与硅相比，高禁带材料GaAs的另一个特点是其优越的高温性能。本文讨论了GaAs和Al_xGa(1−_x)的压电性及其相关性质。由此导出了常用的(100)和(111)取向衬底的压电张量。用不同衬底取向实现的传感器的测量结果验证了这些计算结果。
In this paper piezoelectric stress transducers are proposed on the base of GaAs and AlxGa(1−x)As. These materials exhibit reasonable piezoelectric properties and since GaAs based integrated circuits have reached a high maturity they are a promising choice for integrated stress transducers. An additional feature of the high band‐gap material GaAs is its superior high‐temperature performance in comparison with Si. In this paper the piezoelectric and related properties of GaAs and AlxGa(1−x) are discussed. Therefore the piezoelectric tensors for the commonly used (100) and (111) oriented substrates are derived. These calculations are verified by measurements of some realized sensors using different substrate orientations.