Dynamics of Surface Photovoltage Effects on Clean and Negative Electron Affinity Surfaces of p-GaAs (100)
Dynamics of Surface Photovoltage Effects on Clean and Negative Electron Affinity Surfaces of p-GaAs (100)
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表面光电压对 p-GaAs 清洁负电子亲和力表面影响的动力学 (100)
DOI：
10.1143/jpsj.72.659
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发表时间：
2003
影响因子：
1.7
通讯作者：
M. Kamada
中科院分区：
文献类型：
--
作者：
Senku Tanaka;S. Moré;Kazutoshi Takahashi;M. Kamada
用同步辐射和激光相结合的芯级光电子能谱研究了p-GaAs(100)表面光伏效应的动力学过程。结果表明，在室温和90K温度范围内，SPV的时间分布在微秒范围内有很大的不同，这可以用光激发载流子通过热离子过程和隧道过程的复合来解释。研究了负电子亲和势(NEA)表面SPV效应及其时间分布。观察到NEA表面的SPV效应被抑制，这可能是由于光激发载流子的逃逸过程所致。
Core-level photoelectron spectroscopy with the combination of synchrotron radiation and laser light was used for exploring the dynamics of the surface photovoltage (SPV) effect on a p -GaAs (100). It was found that a temporal profile of the SPV is very different in microsecond range between room temperature and 90 K. The results can be explained with the recombination of photoexcited carriers via thermionic and tunneling processes. The SPV effects and its temporal profiles on the negative electron-affinity (NEA) surface were also studied. It was observed that the SPV effect is suppressed on the NEA surface, which may be due to the escape process of the photoexcited carriers.