Thickness and structure of thin films determined by background analysis in hard X-ray photoelectron spectroscopy
Thickness and structure of thin films determined by background analysis in hard X-ray photoelectron spectroscopy
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DOI：
10.1063/1.4985176
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发表时间：
2017-06
影响因子：
3.2
通讯作者：
Yi-Tao Cui;S. Tougaard;H. Oji;J. Son;Y. Sakamoto;T. Matsumoto;A. Yang;O. Sakata;Huaping Song;I. Hirosawa
中科院分区：
文献类型：
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作者：
Yi-Tao Cui;S. Tougaard;H. Oji;J. Son;Y. Sakamoto;T. Matsumoto;A. Yang;O. Sakata;Huaping Song;I. Hirosawa
本文报道了用X射线能量为7939 eV的硬X射线光电子能谱(HAXPES)分析Ru在Si上的薄膜光电子峰的非弹性背景。为了提取有关Ru膜厚度和形貌的信息，使用了Tougaard背景分析方法。对Si_1s峰和Ru_2p、2s峰的分析结果与X射线反射率测定的厚度一致。由我们的拟合结果和扫描电子显微镜确定的表面形貌也发现了很好的一致性(Ru在硅表面上形成岛屿，薄膜厚度为12 nm，并覆盖了较大厚度的整个表面)。结果表明，用这种方法可以获得厚度为15 0 nm的薄膜的信息，这相当于非弹性平均自由程(∼)的20倍。这比以前报道的用于X射线光电子能谱的常规X射线光电子能谱的∼大10倍.
We report on the analysis of inelastic backgrounds associated with photoelectron peaks from thin films of Ru on Si using hard X-ray photoelectron spectroscopy (HAXPES) with an X-ray energy of 7939 eV. To extract information on the thickness and morphology of the Ru films, the Tougaard-background-analysis method was used. Consistent results from the analysis of the Si 1s peaks as well as the Ru 2p, 2s peaks to the thicknesses determined with X-ray reflectivity were found. Good agreement was also found for surface topography (the Ru forms islands on the Si surface for film thicknesses <12 nm and covers the complete surface for larger thicknesses) determined by our fitting results and scanning electron microscopy. It is demonstrated that with this method it is possible to obtain information on films up to 150 nm thickness, which corresponds to ∼20 times the inelastic mean free paths (IMFPs). This is larger than the previously reported ∼10 times the IMFP for X-ray photoelectron spectroscopy with conventional ...