Rapid chemical vapour-deposition of Si3N4
Rapid chemical vapour-deposition of Si3N4
复制标题
Si3N4 的快速化学气相沉积
DOI：
10.1007/bf00540292
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发表时间：
1977
影响因子：
4.5
通讯作者：
T. Goto
中科院分区：
文献类型：
--
作者：
T. Hirai;K. Niihara;T. Goto
热解Si_3N_4有望比反应烧结和热压Si_3N_4具有更好的性能。我们使用SiC 14 + NH3+ H2体系作为源材料，以0.73 mm h-~的沉积速率（层厚增加速率x/t）成功制备了块状结晶Py-Si 3 N4 [1]。目前的工作表明，x/t可以增加到约1.2
Pyrolytic Si3N 4 is expected to have more favourable properties than those of reaction-sintered and hot-pressed Si3N4. We have successfully prepared the massive crystalline Py-Si3 N4 at the deposition rate (the rate of increase in layer thickness x/t) of 0.73 mm h-~ using the SIC14+ NH3+ H2 system as the source material [1]. The present work revealed that x/t can be increased to about 1.2