Demonstration of Silicon-on-insulator mid-infrared spectrometers operating at 3.8μm
Demonstration of Silicon-on-insulator mid-infrared spectrometers operating at 3.8μm
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DOI：
10.1364/oe.21.011659
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发表时间：
2013-05-20
期刊：
影响因子：
3.8
通讯作者：
Roelkens, G.
中科院分区：
文献类型：
--
作者：
Muneeb, M.;Chen, X.;Roelkens, G.
本文报道了工作在3.8 μ m波段的绝缘体上硅中红外光谱仪的设计和表征。该器件在CMOS中试生产线上制作在200 mm SOI晶片上。设计并测试了阵列波导光栅结构和平面凹面光栅结构。实验表明，该器件具有较低的插入损耗（1.5-2.5dB）和良好的串扰特性（15- 20 dB），波导传输损耗在3 - 6dB/cm范围内。(C)2013年美国光学学会
The design and characterization of silicon-on-insulator mid-infrared spectrometers operating at 3.8 mu m is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm. (C) 2013 Optical Society of America