p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers
p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers
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DOI：
10.1109/ted.2013.2272330
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发表时间：
2013-10-01
影响因子：
3.1
通讯作者：
Vescan, Andrei
中科院分区：
文献类型：
--
作者：
Hahn, Herwig;Reuters, Benjamin;Vescan, Andrei
在过去的几年中，III族氮化物基器件已被证明具有卓越的性能。然而，当涉及到p沟道器件的制造时，严重缺乏知识。p沟道异质结构场效应晶体管（HFET）可以为基于氮化物的互补逻辑开辟道路。在这里，增强型和耗尽型p沟道GaN/AlInGaN HFET的全面研究进行。研究了高p掺杂GaN盖层对器件性能的影响。分析了后势垒的栅极凹陷和组成变化。实现了高达10（8）的ON/OFF比和约75 mV/decade的亚阈值摆幅。
Within the last years, III-nitride-based devices have been demonstrated with exceptional performance. There is, however, a severe lack of knowledge when it comes fabrication of p-channel devices. p-Channel heterostructure field-effect transistors (HFETs) could open the way for nitride-based complementary logic. Here, a comprehensive study of enhancement and depletion mode p-channel GaN/AlInGaN HFETs is performed. The influence of a highly p-doped GaN cap layer on device performance is investigated. Gate recessing and changes in composition of the backbarrier are analyzed. ON/OFF ratios of up to 10(8) and subthreshold swings of about 75 mV/decade are achieved.