Low‐stress tantalum absorbers deposited by sputtering for x‐ray masks
Low‐stress tantalum absorbers deposited by sputtering for x‐ray masks
复制标题
用于 X 射线掩模的溅射沉积低应力钽吸收剂
DOI：
10.1116/1.584481
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发表时间：
1989
影响因子：
1.4
通讯作者：
H. Sano
中科院分区：
文献类型：
--
作者：
Y. Iimura;H. Miyashita;H. Sano
介绍了一种用直流偏压射频磁控溅射法制备稳定、低应力的钽薄膜的方法。论证了氩气作为工作气体的优越性。应力-偏压曲线有一个平台，薄膜应力较低，在-15至20 V的偏压范围内保持恒定。平台应力随工作压强和衬底温度线性变化，斜率分别为1.2×1010 dyn/cm 2 Pa和8.6×106 dyn/cm 2 deg。通过控制压力和温度，获得了（3±2）×108 dyn/cm ~ 2的应力。当在220 °C下沉积Ta膜，然后在220 ° C下退火1h时，可获得在高达300 °C的热处理下稳定的Ta膜。薄膜的密度为（15.0±0.5）g/cm ~ 3。通过X射线衍射，发现薄膜是α-Ta相和β-Ta相的混合物。制作了宽度为0.15 μm的Ta图形。
A method for fabricating stable and low‐stress tantalum films, suitable for absorbers of x‐ray masks, by dc‐bias, rf magnetron sputtering is presented. The superiority of Xe over Ar as a working gas is demonstrated. The stress‐vs‐bias‐voltage curve has a plateau, where the film stresses are low and constant over the bias voltage ranging from −15 to 20 V. The plateau stresses vary linearly with both the working Xe pressure and the substrate temperature with slopes of 1.2×1010 dyn/cm2 Pa and 8.6×106 dyn/cm2 deg, respectively. By control of the pressure and the temperature, stresses of (3±2)×108 dyn/cm2 are achieved. The Ta film which is stable under a heat treatment up to 300 °C is obtainable when it is deposited at 220 °C and then annealed at 220 °C for 1 h. The density of the films is (15.0±0.5) g/cm3. By x‐ray diffraction the films are found to be in a mixture of the α‐Ta phase and the β‐Ta phase. Ta patterns of 0.15 μm in width were fabricated.