A Robust 130 nm-CMOS Built-In Current Sensor Dedicated to RF Applications
A Robust 130 nm-CMOS Built-In Current Sensor Dedicated to RF Applications
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专用于 RF 应用的鲁棒 130 nm-CMOS 内置电流传感器
DOI：
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发表时间：
2006
期刊：
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通讯作者：
J. Bégueret
中科院分区：
文献类型：
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作者：
M. Cimino;H. Lapuyade;M. D. Matos;T. Taris;Y. Deval;J. Bégueret
在本文中，我们提出了一种设计方法，允许一个戏剧性的减少对工艺变化的依赖，从而产生一个新版本的BICS。利用130 nm VLSI CMOS工艺，建议的BICS具有低于10%的输出满量程范围的峰峰值色散。这使得它更适合在保持初始BICS内在性能的同时实现测试功能。通过监控低噪声放大器（LNA）的电源电流来说明内置自测方法。测量结果证实了BICS相对于被测电路（CUT）的透明度及其准确性。
In this paper we present a design methodology that allows a dramatic reduction of the dependency on process variation, yielding to a new version of this BICS. Taking advantage of a 130 nm VLSI CMOS technology, the proposed BICS has a peak-to-peak dispersion lower than 10% of its output full-scale range. It makes it more suitable to implement the test functionality while maintaining the initial BICS intrinsic performances. The built-in self-test methodology is illustrated by monitoring the supply current of Low-Noise Amplifiers (LNAs). Measurements confirm the BICS’s transparency relative to the circuit-under-test (CUT) and its accuracy.