ZnO-Based Fairly Pure Ultraviolet Light-Emitting Diodes With a Low Operation Voltage
ZnO-Based Fairly Pure Ultraviolet Light-Emitting Diodes With a Low Operation Voltage
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DOI：
10.1109/led.2009.2028904
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发表时间：
2009-10-01
影响因子：
4.9
通讯作者：
Zhao, Xingzhong
中科院分区：
文献类型：
--
作者：
Huang, Huihui;Fang, Guojia;Zhao, Xingzhong
利用射频磁控溅射系统在商用n(+)-GaN/蓝宝石衬底上制备了氧化锌基金属绝缘体(HfO2)半导体二极管。电致发光测试表明，该二极管表现出较纯的紫外光发射，峰值位于370 nm附近，线宽小于8 nm。通过选择合适的绝缘HfO2层厚度，发射的阈值电压可以降低到2V，这表明这种基于氧化锌的相当纯的紫外光发光二极管可以由两个普通的干电池驱动。从n(+)-GaN/蓝宝石衬底和高卡伯绝缘层HfO2两个方面分析了阈值电压低的原因。
A ZnO-based metal-insulator (HfO2)-semiconductor diode was synthesized on a commercially available n(+)-GaN/sapphire substrate using a radio-frequency magnetron sputtering system. Electroluminescence measurements revealed that the diode exhibited fairly pure ultraviolet (UV) emission peaking at similar to 370 nm with a line width of less than 8 nm. By choosing a proper thickness of the insulator HfO2 layer, the threshold voltage of the emission could be reduced to 2 V, demonstrating that this ZnO-based fairly pure UV light-emitting diode can be driven by two ordinary dry batteries. The reason for low threshold voltage is proposed in terms of the n(+)-GaN/sapphire substrate and the high-kappa insulator HfO2 layer.